Idaho County All Hazard Mitigation Plan.Protest Valuation or Casualty Loss Form.Request for Qualifications for Architectural Services/ Idaho County Jail.Important Dates for the Idaho County Assessor’s Office.Idaho County Recycling Bag It and Shredding Form.Commercial Cardboard Compactor Subscription Form.“No Spray” on Idaho County Roads Agreement.Protest of Valuation or Request for Casualty Loss.Idaho County Historic Preservation Commission.Such reconfigurable low-power MEMS switched RFICs could be used in highly adaptive broadband receiver front-ends for wireless communication, sensor networks and imaging systems, for example. Despite this fact, the MEMS LNA resulted in a measured isolation of 9.0-13.5 dB at 24-31 GHz when the Dicke switch was switched ON and OFF which validates the switching function of the SiGe RF-MEMS wideband LNA design. The MEMS switched LNA gain was found to be 10-17 dB lower than anticipated due to some unintentionally missing metal via contacts between the Dicke switch and LNA ground planes. The Dicke switch has 3 dB and 22 dB of losses and isolation at 25 GHz. The wideband LNA design has a measured gain of 10-19.9 dB at 2-33 GHz given a DC power consumption (PDC) of 35 mW and a measured noise figure of 5.4-6.3 dB at 14-26.5 GHz when PDC=7.5 mW (the LNA gain is then 10-14.2 dB at 4-26 GHz). This work presents a novel monolithic integration of a 30 GHz RF-MEMS Dicke switch network and a wideband LNA realised in a 0.25 μm SiGe BiCMOS process. To the best of our knowledge, this is the first reported MEMS 5-bit phase shifter in the literature that has undergone different reliability and qualification testing including 3-axis vibrations. Furthermore, reliability of the MEMS phase shifter is extensively investigated and presented with cold and hot switched conditions. The reliability of the SPST and SP4T show more than 10 million cycles with an RF power of 0.1 – 2 W. Total area of the fabricated 5-bit phase shifter is 4.7 × 2.8 mm2. The 5-bit phase shifter demonstrates an average insertion loss of 2.65 dB in the 13 - 18 GHz band with a return loss better than 22 dB and average phase error less than 0.680 at 17 GHz. The phase shifters are fabricated on 635-µm alumina substrate using surface micromachining process. ![]() Two individual 2-bit and one 1-bit phase shifters are cascaded to develop the complete 5-bit phase shifter. The design is implemented using coplanar waveguide (CPW) transmission line. This work presents a Ku-band micro-electromechanical system (MEMS) based 5-bit phase shifter using dc contact single-pole-four-throw (SP4T) and single-pole-double-throw (SPDT) switches. To the best of the authors’ knowledge, this is the first reported MEMS 3-bit phase shifter in the literature that has used a minimum number of switching elements per phase state. Reliability of the phase shifter is extensively characterized with different incident RF powers at room temperature (25☌) and discussed in detail. SP8T switches are capable of handling 0.1–1 W of power up to 100 million cycles which is sufficient power handling capability for wireless communication systems. ![]() The total area of the fabricated 3-bit phase shifter is 5.95 mm2. Measured average phase error is less than 0.98° at 35 GHz. Finally, the phase shifter provides average return loss of better than 14 dB and average insertion loss of 4.4 dB over the 34.75–35.25 GHz. Later, two SP8T switches are connected back to back to develop the 3-bit phase shifter using different delay lines at 35 GHz. ![]() The SP8T switch results in isolation levels of 31–15 dB, return loss of 33–18 dB and insertion loss of 0.6–1.9 dB, respectively, at 26–40 GHz. The symmetric and compact SP8T switch is the primary building block of the 3-bit phase shifter. Single switch dimensions are 0.14 × 0.23 mm2 which is much smaller than Si-on-insulator switches. Devices are fabricated on 635 μm alumina substrate utilizing on the coplanar waveguide (CPW) transmission line. This paper presents a radio frequency micro-electromechanical system (RF MEMS) based 3-bit phase shifter using MEMS single-pole-eight-throw (SP8T) switches.
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